isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE = 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) ·Complement to Type TIP147 APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current- Continuous 0.5 A PC Collector Power Dissipation @TC=25℃ 125 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35.7 ℃/W isc Website：www.iscsemi.cn TIP142 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor TIP142 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ,IB= 10mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ,IB= 40mA 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A ,IB= 40mA 3.5 V VBE(on) Base-Emitter On Voltage IC= 10A ; VCE= 4V 3.0 V ICBO Collector Cutoff current VCB= 100V, IE= 0 1 mA ICEO Collector Cutoff current VCE= 50V, IB= 0 2 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2 mA hFE-1 DC Current Gain IC= 5A ; VCE= 4V 1000 hFE-2 DC Current Gain IC= 10A ; VCE= 4V 500 100 UNIT V Switching Times td tr tstg tf Delay Time Rise Time Storage Time Fall Time isc Website：www.iscsemi.cn VCC = 30 V, IC = 5.0 A, IB = 20 mA; Duty Cycle≤20% IB1 = IB2, RC & RB Varied, TJ = 25℃ B 0.15 μs 0.55 μs 2.5 μs 2.5 μs INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Website：www.iscsemi.cn isc Product Specification TIP142