isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE = 400(Min)@ IC= -10A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -150V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -2.0V(Max)@ IC= -10A = -3.4V(Max)@ IC= -15A ·Complement to Type MJ11018 APPLICATIONS ·Designed for general purpose amplifiers ,low frequency switching and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak -30 A IB Base Current- Continuous -0.5 A PC Collector Power Dissipation @TC=25℃ 175 W Tj Junction Temperature 175 ℃ -65~200 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.86 ℃/W isc Website：www.iscsemi.cn MJ11017 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor MJ11017 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -10A ,IB= -0.1A -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -15A ,IB= -0.15A -3.4 V VBE(sat) Base-Emitter Saturation Voltage IC= -15A ,IB= -0.15A -3.8 V VBE(on) Base-Emitter On Voltage IC= -10A ; VCE= -5V -2.8 V ICEV Collector Cutoff Current VCEV=150V;VBE(off)=1.5V VCEV=150V;VBE(off)=1.5V;TC=150℃ -0.5 -5.0 mA ICEO Collector Cutoff Current VCE= -75V, IB=0 -1 mA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -2 mA hFE-1 DC Current Gain IC= -10A ; VCE= -5V 400 hFE-2 DC Current Gain IC= -15A ; VCE= -5V 100 COB Output Capacitance IE= 0 ; VCB= -10V,f= 0.1MHz -150 UNIT V 15000 600 pF Switching times td Delay Time tr Rise Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= -10A , VCC= -100V; IB1= -0.1A; VBE(off)= -5V; Duty Cycle≤1.0% 75 ns 0.5 μs 2.7 μs 2.5 μs