isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE = 1000(Min)@ IC= 4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.0V(Max)@ IC= 4A ·Complement to Type TIP135 APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 12 A IB Base Current- Continuous 0.3 A PC Collector Power Dissipation @TC=25℃ Collector Power Dissipation @Ta=25℃ B Tj Tstg Junction Temperature Storage Temperature Range 70 W 2 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.785 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 63.5 ℃/W isc Website：www.iscsemi.cn TIP130 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor TIP130 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A, IB= 30mA 3.0 V VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 4V 2.5 V ICBO Collector Cutoff Current VCB= 60V, IE= 0 0.2 mA ICEO Collector Cutoff Current VCE= 30V, IB= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 mA hFE-1 DC Current Gain IC= 1A; VCE= 4V 500 hFE-2 DC Current Gain IC= 4A; VCE= 4V 1000 isc Website：www.iscsemi.cn CONDITIONS MIN MAX 60 B B UNIT V 15000