TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/612 DEVICES LEVELS 2N7372 JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 100 Vdc Emitter-Base Voltage VEBO 5.5 Vdc IC 5.0 Adc PT 4.0 58 W Tj , Tstg -65 to +200 °C RθJC 3 °C/W Max. Unit Collector Current Total Power Dissipation @ TA = +25°C (1) @ TC = +25°C (2) Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to Case 1) 2) Derate linearly 22.8mW/°C for TA > 25°C Derate linearly 331mW/°C for TC > 25°C TO-254AA PIN 1 = BASE PIN 2 = COLLECTOR PIN 3 = EMITTER ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 80 OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100mAdc Vdc Collector-Emitter Cutoff Current VCE = 60Vdc, VBE = 0Vdc VCE = 100Vdc, VBE = 0Vdc ICES1 ICES2 1.0 1.0 µAdc mAdc Collector-Emitter Cutoff Current VCE = 40Vdc, IB = 0 ICEO 50 µAdc Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 5.5Vdc IEBO1 IEBO2 1.0 1.0 µAdc mAdc T4-LDS-0045 Rev. 1 (072805) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/612 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.) Parameters / Test Conditions ON CHARACTERISTICS Symbol Min. Max. hFE1 hFE2 hFE3 50 70 40 --200 --- Unit (3) Forward-Current Transfer Ratio IC = 0.05Adc, VCE = 5.0Vdc IC = 2.5Adc, VCE = 5.0Vdc IC = 5.0Adc, VCE = 5.0Vdc Base-Emitter Non-Saturated Voltage VCE = 5.0Vdc, IC = 2.5Adc VBE 1.45 Vdc Base-Emitter Saturation Voltage IC = 2.5Adc, IB = 0.25Adc IC = 5.0Adc, IB = 0.5Adc VBE(sat)1 VBE(sat)2 1.45 2.2 Vdc Collector-Emitter Saturation Voltage IC = 2.5Adc, IB = 0.25Adc IC = 5.0Adc, IB = 0.5Adc VCE(sat)1 VCE(sat)2 0.75 1.5 Vdc Max. Unit 250 pF DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. hfe 50 |hfe| 7.0 Common Emitter Small Signal, Short Circuit Forward Current Transfer Ratio VCE = 5Vdc, IC = 100mAdc, f = 1kHz Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 0.5Adc, VCE = 5Vdc, f = 10MHz Output Capacitance VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Cobo SAFE OPERATING AREA DC Tests TC = +25°C, 1 Cycle, t = 1s Test 1 VCE = 12Vdc, IC = 5.0Adc Test 2 VCE = 32Vdc, IC = 1.5Adc Test 3 VCE = 80Vdc, IC = 100mAdc (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0% T4-LDS-0045 Rev. 1 (072805) Page 2 of 2