GS150TA25110 GS150TI25110 Gallium Arsenide Schottky Rectifier Isolated Surface Mount Package Preliminary Data VRSM VRRM V V Type Part Number 250 250 GS150 TI25110 Triple Independent 250 250 GS150 TC25110 Triple Common cathode 250 250 GS150 TA25110 Triple Common anode A1 T R IP L E IN D E P E N D E N T (T I) C1 A2 C2 A3 C3 Configuration A1 TRIPLE COMMON CATHODE (TC) GS150TC25110 I DC = 10 A V RRM = 250 V CJunction = 18 pF C1 A2 C2 A3 C3 TRIPLE COMMON ANODE (TA) A1 C1 A2 C2 A3 C3 Symbol Conditions Maximum Ratings I FAV IFAV TC = 25°C; DC TC = 90°C; DC 10 9 A A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 20 A -55...+175 -55...+150 °C °C 25 >2500 >600 W V V TVJ Tstg A = Anode, C = Cathode Features ● ● ● ● ● Ptot Isolation Isolation TC = 25°C (20W/device) (Substrate to Case) (Diode to Diode) Symbol Conditions ● ● Low forward voltage Very high switching speed Trr <15ns Low junction capacity of GaAs - low reverse current peak at turn off Soft turn off Temperature independent switching behaviour High temperature operation capability Epoxy meets UL 94V-0 Applications IR VF CJ Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 125°C VR = VRRM 1.3 1.3 IF = 5 A; IF = 5 A; TVJ = 125°C TVJ = 25°C 1.3 1.2 VR = 100 V; TVJ = 125°C 18 1.5 ● (SMPS) mA mA ● ● High frequency converters Resonant converters V V pF RthJC 6 K/W Weight 2 g Pulse test: MHz switched mode power supplies Pulse Width = 5 ms, Duty Cycle < 2.0 % Data per diode unless otherwise specified IXYSRF reserves the right to change limits, conditions and dimensions © 2003 IXYSRF/Directed Energy, Inc. IXYSRF/Directed Energy, Inc. 2401 Research Blvd. Ste 108, Fort Collins, CO 80526 Phone: (970) 493-1901, Fax: 970-493-1903, www.directedenergy.com IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim, Germany Phone: +49-6206-503-0, Fax: +49-6206-503627 GS150TA25110 GS150TI25110 100.00 GS150TC25110 1000 CAPACITANCE IN pF CAPACITANCE Amperes 10.00 1.00 0.10 0.00 100 10 0.50 1.00 1.50 0.1 2.00 1 100 1000 REVERSE BIAS VOLTAGE IN VOLTS Volts Fig. 2 Typical junction capacity versus blocking voltage Fig. 1Typical forward characteristics 300 160 140 250 120 TEMPERATURE IN C REVERSE VOLTAGE 10 200 150 100 50 100 80 60 40 20 0 1.00E-06 1.00E-05 1.00E-04 0 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 LEAKAGE CURRENT IN AMPERES LEAKAGE CURRENT IN AMPERES Fig. 3 Typical leakage current vs. voltage at 25C Fig. 4 Typical leakage current vs. temperature at 100V Explanatory comparison of the basic operational behavior of rectifier diodes and Gallium Arsenide Schottky diodes: Conduction Rectifier Diode By majority + minority carriers GaAs Schottky Diode By majority carriers only Forward characteristics VF (IF) VF (IF), see Fig. 1 Turn off characteristics Extraction of excess carriers causes temperature dependant reverse recovery (trr, IRM, Qrr) Reverse current charges junction capacity CJ, see Fig. 2; not temperature dependent Turn on characteristics Delayed saturation leads to VFR No turn on overvoltage peak Doc #9200-0262 Rev 1 © 2003 IXYSRF/Directed Energy, Inc. IXYSRF/Directed Energy, Inc. 2401 Research Blvd. Ste 108, Fort Collins, CO 80526 Phone: (970) 493-1901, Fax: 970-493-1903, www.directedenergy.com IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim, Germany Phone: +49-6206-503-0, Fax: +49-6206-503627