2N6426 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 40 VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 12 V IC Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range 1.2 A -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units 2N6426 625 5.0 83.3 mW mW/°C °C/W 200 °C/W 2N6426 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 10 mA, I B = 0 40 V(BR)CBO Collector-Base Breakdown Voltage I C = 100 µA, I E = 0 40 V V V(BR)EBO Emitter-Base Breakdown Voltage I E = 10 µA, I C = 0 12 V ICBO Collector Cutoff Current VCB = 30 V, IE = 0 50 nA ICEO Collector Cutoff Current VCE = 25 V, IB = 0 1.0 µA IEBO Emitter Cutoff Current VEB = 10 V, IC = 0 50 nA 200,000 300,000 200,000 1.2 1.5 2.0 V V V ON CHARACTERISTICS* hFE DC Current Gain VCE( sat) Collector-Emitter Saturation Voltage VBE( sat) Base-Emitter Saturation Voltage VCE = 5.0 V, IC = 10 mA VCE = 5.0 V, IC = 100 mA VCE = 5.0 V, IC = 500 mA IC = 50 mA, IB = 0.5 mA IC = 500 mA, I B = 0.5 mA IC = 500 mA, I B = 0.5 mA 20,000 30,000 20,000 VBE( on) Base-Emitter On Voltage IC = 50 mA, VCE = 5.0 V 1.75 V SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 7.0 pF Cib Input Capacitance VEB = 1.0 V, IC = 0, f = 1.0 MHz 15 pF hfe Small-Signal Current Gain hie Input Impedance I C = 10 mA, VCE = 5.0 V, f = 1.0 kHz I C = 10 mA, VCE = 5.0 V, hoe NF Output Admittance f = 1.0 kHz Noise Figure I C = 1.0 mA, VCE = 5.0 V, Rs = 100 kΩ, f = 10 kHz to 15.7 kHz *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 20,000 100 2,000 kΩ 1,000 µmho 10 dB 2N6426 NPN Darlington Transistor