FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " (dot) signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This dual complementary device was designed for use as a general purpose amplifier applications at collector currents to 300mA. Sourced from Process 10 (NPN ) and Process 68 (PNP). Absolute Maximum Ratings* TA = 25°C unless otherwise noted Value Units Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current 500 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Parameter VCEO *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol TA = 25°C unless otherwise noted Characteristics Max Units PD Total Device Dissipation, total per side 700 350 mW RθJA Thermal Resistance, Junction to Ambient, total 180 °C/W 1998 Fairchild Semiconductor Corporation Page 1 of 2 fmb1020.lwpPr10&68(Y4) FMB1020 Discrete Power & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO Collector to Emitter Voltage Ic = 1.0 mA 45 V BVCBO Collector to Base Voltage Ic = 10 uA 60 V BVEBO Emitter to Base Voltage Ie = 10 uA 6 V ICBO Collector Cutoff Current Vcb = 50 V 50 nA ICES Collector Cutoff Current Vce = 40 V 50 nA IEBO Emitter Cutoff Current Veb = 4 V 50 nA ON CHARACTERISTICS hFE DC Current Gain Vce = Vce = Vce = Vce = 1V, 1V, 1V, 5V, Ic = 100uA Ic = 10mA Ic = 100mA Ic = 150mA 80 100 100 100 450 350 VCE(sat) Collector-Emitter Saturation Voltage Ic = 10mA, Ib = 1mA Ic = 200mA, Ib = 20mA 0.2 0.4 V VBE(sat) Base-Emitter Saturation Voltage 0.85 1.0 V SMALL SIGNAL CHARACTERISTICS Output Capacitance COB Ic = 10mA, Ib = 1mA Ic = 200mA, Ib = 20mA Vcb = 10V, f = 1MHz TYP 4.5 pF fT Current Gain - Bandwidth Product Vce = 20V, Ic = 20mA, f = 100MHz 300 MHz NF Noise Figure Vce = 5V, Ic = 100uA, Rs = 2kohms, f = 1 kHz 2.5 dB 1998 Fairchild Semiconductor Corporation Page 2 of 2 fmb1020.lwpPr10&68(Y4) FMB1020 NPN & PNP Complementary Dual Transistor