JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes CMPSH-3/3A/3C/3S SOT—23 SCHOTTKY DIODE FEATURES CMPSH-3 Marking: D95 CMPSH-3A Marking: DB1 Reverse breakdown voltage Reverse voltage Forward Diode leakage current voltage capacitance Reverse recovery time Symbol V(BR) IR VF Ctot t rr ０．９５ ０．４ ０．９５ １．９ ２．９ ２．４ １．３ CMPSH-3C Marking: DB2 ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter １．０ Power dissipation PD : 350 mW（Tamb=25℃） Forward Current IF : 100 mA Reverse Voltage VR : 30 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150 unless Test otherwise conditions IR= 100μA Unit : mm CMPSH-3S Marking:DA5 specified） MIN MAX 30 UNIT V VR=25V 500 nA VR=25V，TA=100℃ 100 μA IF=2mA 0.33 IF=15mA 0.45 IF=100mA 1 VR=0V f=1MHz IF =IR=10mA IRR=1.0mA RL=100Ω V 8 ｐＦ 5 ｎｓ SOT-23 PACKAGE OUTLINE DIMENSIONS D θ b L E E1 L1 0.2 e C A A1 Symbol A2 e1 Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 e e1 1.800 L 0.100 0.037TPY 0.950TPY 2.000 0.071 0.550REF 0.079 0.022REF L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8°