JMNIC 2N5498

Product Specification
www.jmnic.com
2N5498
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・High DC current gain and low saturation voltage
・High Safe Operating Area
APPLICATIONS
・Designed for high power audio, disk head
positioners and other linearapplications.
These devices can also be used in power
switching circuits such as relay or solenoid
drivers, DC-DC converters or inverters.
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
130
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
15
A
IB
Base current
4
A
PD
Total Power Dissipation
200
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.17
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
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Product Specification
www.jmnic.com
2N5498
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO
Collector-emitter breakdwon voltage
IC=0.2A ;IB=0
130
V
VCER
Collector-emitter sustaining voltage
IC=0.2A ;RBE=100Ohm
150
V
VCEsat-1
Collector-emitter saturation voltage
IC=8A; IB=0.8A
1.4
V
VCEsat-2
Collector-emitter saturation voltage
IC=15A ;IB=3A
4.0
V
ICEO
Collector cut-off current
VCE=130V; IB=0
2.0
mA
ICEX
Collector cut-off current
VCE=130V; VBE(off)=1.5V
TC=150℃
2.0
10.0
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
1.0
mA
hFE
DC current gain
IC=15A ; VCE=5V
10
Transition frequency
IC=1A ; VCE=10V
1
fT
CONDITIONS
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MIN
TYP.
MAX
UNIT
50
MHz
Product Specification
www.jmnic.com
2N5498
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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