JMNIC 2SA1074

JMnic
Product Specification
2SA1074
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3 package
・Excellent safe operating area
APPLICATIONS
・For high power audio ,stepping
motor and other linear applications
・Relay or solenoid drviers
・DC-DC converters inverters
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-160
V
VCEO
Collector-emitter voltage
Open base
-160
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-15
A
IB
Base current
-7
A
PC
Collector power dissipation
150
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
MAX
UNIT
0.98
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
JMnic
Product Specification
2SA1074
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-0.2A ;IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=-4A; IB=-0.4A
-1.1
V
VCEsat-2
Collector-emitter saturation voltage
IC=-10A; IB=-3.3A
-3.0
V
VBE
Base-emitter on voltage
IC=-4A ; VCE=-4V
-1.8
V
ICEO
Collector cut-off current
VCE=-60V; VBE(off)=0
-0.1
mA
ICEV
Collector cut-off current
VCE=Rated Value; VBE(off)=1.5V
TC=150℃
-1.0
-6.0
mA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-0.1
mA
hFE-1
DC current gain
IC=-4A ; VCE=-4V
20
hFE-2
DC current gain
IC=-10A ; VCE=-4V
5
2
MIN
TYP.
MAX
-160
UNIT
V
JMnic
Product Specification
2SA1074
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3