JMNIC 2N6675

JMnic
Product Specification
Silicon NPN Power Transistors
2N6674 2N6675
DESCRIPTION
・With TO-3 package
・High voltage,high speed
APPLICATIONS
・Switching regulators
・Inverters
・Solenoid and relay drivers
・Deflection circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
2N6674
VCBO
Collector-base voltage
300
Open base
2N6675
VEBO
V
650
2N6674
Collector-emitter voltage
Emitter-base voltage
UNIT
450
Open emitter
2N6675
VCEO
VALUE
V
400
Open collector
7
V
IC
Collector current
15
A
IB
Base current
5
A
PT
Total Power Dissipation
Ta=25℃
6
TC=25℃
175
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.0
℃/W
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
JMnic
Product Specification
Silicon NPN Power Transistors
2N6674 2N6675
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6674
VCEO(SUS)
Collector-emitter
sustaining voltage
MIN
TYP.
MAX
UNIT
300
IC=0.2A ;IB=0
2N6675
V
400
VCEsat-1
Collector-emitter saturation voltage
IC=10A; IB=2A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=15A; IB=5A
5.0
V
Base-emitter saturation voltage
IC=10A; IB=2A
1.5
V
0.1
mA
1.0
mA
VBEsat
2N6674
ICBO
VCB=450V; IE=0
Collector cut-off current
2N6675
VCB=650V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=3V
15
40
hFE-2
DC current gain
IC=10A ; VCE=2V
8
20
Trainsistion frequency
IC=0.5A ; VCE=10V;f=1MHz
fT
2
15
MHz
JMnic
Product Specification
Silicon NPN Power Transistors
2N6674 2N6675
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3