JMnic Product Specification Silicon NPN Power Transistors 2N6674 2N6675 DESCRIPTION ・With TO-3 package ・High voltage,high speed APPLICATIONS ・Switching regulators ・Inverters ・Solenoid and relay drivers ・Deflection circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N6674 VCBO Collector-base voltage 300 Open base 2N6675 VEBO V 650 2N6674 Collector-emitter voltage Emitter-base voltage UNIT 450 Open emitter 2N6675 VCEO VALUE V 400 Open collector 7 V IC Collector current 15 A IB Base current 5 A PT Total Power Dissipation Ta=25℃ 6 TC=25℃ 175 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.0 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case JMnic Product Specification Silicon NPN Power Transistors 2N6674 2N6675 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6674 VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT 300 IC=0.2A ;IB=0 2N6675 V 400 VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=2A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=15A; IB=5A 5.0 V Base-emitter saturation voltage IC=10A; IB=2A 1.5 V 0.1 mA 1.0 mA VBEsat 2N6674 ICBO VCB=450V; IE=0 Collector cut-off current 2N6675 VCB=650V; IE=0 IEBO Emitter cut-off current VEB=7V; IC=0 hFE-1 DC current gain IC=1A ; VCE=3V 15 40 hFE-2 DC current gain IC=10A ; VCE=2V 8 20 Trainsistion frequency IC=0.5A ; VCE=10V;f=1MHz fT 2 15 MHz JMnic Product Specification Silicon NPN Power Transistors 2N6674 2N6675 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3