ISC 2N3773

Inchange Semiconductor
Product Specification
2N3773
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Complement to type 2N6609
・High DC current gain
・Low saturation voltage
・High safe operating area
APPLICATIONS
・Designed for high power audio, disk head
positioners and other linear applications.
These devices can also be used in power
switching circuits such as relay or solenoid
drivers, dc to dc converters or inverters.
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
160
V
VCEO
Collector-emitter voltage
Open base
140
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
16
A
ICM
Collector current-peak
30
A
IB
Base current
4
A
IBM
Base current-peak
15
A
PD
Total Power Dissipation
Derate above 25℃
150
0.855
W
W/℃
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
TC=25℃
Inchange Semiconductor
Product Specification
2N3773
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=8A; IB=0.8A
1.4
V
VCEsat-2
Collector-emitter saturation voltage
IC=16A ;IB=3.2A
4.0
V
VBE
Base-emitter on voltage
IC=8A ; VCE=4V
2.2
V
ICEO
Collector cut-off current
VCE=140V; IB=0
2.0
mA
ICEX
Collector cut-off current
VCE=140V; VBE(off)=1.5V
TC=150℃
2.0
10.0
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
5.0
mA
hFE-1
DC current gain
IC=8A ; VCE=4V
15
hFE-2
DC current gain
IC=16A ; VCE=4V
5
Second breakdown collector current
With base forward biased
VCE=100Vdc,t=1.0s,
Nonrepetitive
Is/b
140
UNIT
V
60
1.5
A
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
2
VALUE
UNIT
1.17
℃/W
Inchange Semiconductor
Product Specification
2N3773
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3