Inchange Semiconductor Product Specification 2N3773 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6609 ・High DC current gain ・Low saturation voltage ・High safe operating area APPLICATIONS ・Designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 16 A ICM Collector current-peak 30 A IB Base current 4 A IBM Base current-peak 15 A PD Total Power Dissipation Derate above 25℃ 150 0.855 W W/℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ TC=25℃ Inchange Semiconductor Product Specification 2N3773 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=8A; IB=0.8A 1.4 V VCEsat-2 Collector-emitter saturation voltage IC=16A ;IB=3.2A 4.0 V VBE Base-emitter on voltage IC=8A ; VCE=4V 2.2 V ICEO Collector cut-off current VCE=140V; IB=0 2.0 mA ICEX Collector cut-off current VCE=140V; VBE(off)=1.5V TC=150℃ 2.0 10.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 5.0 mA hFE-1 DC current gain IC=8A ; VCE=4V 15 hFE-2 DC current gain IC=16A ; VCE=4V 5 Second breakdown collector current With base forward biased VCE=100Vdc,t=1.0s, Nonrepetitive Is/b 140 UNIT V 60 1.5 A THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case 2 VALUE UNIT 1.17 ℃/W Inchange Semiconductor Product Specification 2N3773 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3