JMNIC 2SA1043

JMnic
Product Specification
2SA1043
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3 package
・High transition frequency
・Excellent safe operating area
APPLICATIONS
・Power switching applications
・High frequency power amplifier
・Switching regulators
・DC-DC converters
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-120
V
VCEO
Collector-emitter voltage
Open base
-120
V
VEBO
Emitter-base voltage
Open collector
-7
V
-30
A
150
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
175
℃
Tstg
Storage temperature
-55~200
℃
TC=25℃
JMnic
Product Specification
2SA1043
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
-120
V
V(BR)CBO
Collector-base breakdown voltage
IC=-0.1mA ;IE=0
-120
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-0.1mA ;IC=0
-7
V
VCEsat
Collector-emitter saturation voltage
IC=-15A; IB=-1.5A
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-15A; IB=-1.5A
-2.0
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-50
μA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-50
μA
hFE
DC current gain
IC=-3A ; VCE=-5V
COB
Output capacitance
IE=0 ; VCB=-10V;f=1.0MHz
600
pF
fT
Transition frequency
IC=-2A ; VCE=-10V
60
MHz
2
MIN
TYP.
35
MAX
UNIT
200
JMnic
Product Specification
2SA1043
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3