JMNIC 2SD1037

Product Specification
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2SD1037
Silicon NPN Power Transistors
・
DESCRIPTION
・With MT-200 package
・Excellent safe operating area
・High current capability
APPLICATIONS
・For electrical supply ,DC-DC
converters and low frequency
power amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings (Ta=25°C)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
120
V
VEBO
Emitter-base voltage
Open collector
6
V
30
A
180
W
IC
Collector current
PC
Collectorl power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
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Product Specification
www.jmnic.com
2SD1037
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=10 A;IB=1 A
0.5
V
VBEsat
Base-emitter saturation voltage
IC=10 A;IB=1 A
1.0
V
ICBO
Collector cut-off current
VCB=80V; IE=0
5
μA
IEBO
Emitter cut-off current
VEB=6V; IC=0
5
μA
hFE
DC current gain
IC=10A ; VCE=4V
fT
Transition frequency
IC=1A ; VCE=4V
1.5
MHz
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
210
pF
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MIN
TYP.
MAX
120
UNIT
V
20
Product Specification
www.jmnic.com
2SD1037
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
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