ISC 2SC2460

Inchange Semiconductor
Product Specification
2SC2460
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Complement to type 2SA1050
·Excellent safe operating area
APPLICATIONS
·For audio and general purpose
power amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
140
V
VCEO
Collector-emitter voltage
Open base
140
V
VEBO
Emitter-base voltage
Open collector
5
V
12
A
100
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
175
℃
Tstg
Storage temperature
-55~200
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC2460
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA ;IB=0
140
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
140
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
5
V
Collector-emitter saturation voltage
IC=8A; IB=0.8A
2.5
V
VBE
Base-emitter on voltage
IC=6A ; VCE=5V
1.5
V
ICBO
Collector cut-off current
VCB=140V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
55
hFE-2
DC current gain
IC=6A ; VCE=-5V
35
Transition frequency
IC=1A ; VCE=10V
VCEsat
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
240
70
MHz
Inchange Semiconductor
Product Specification
2SC2460
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3