JMnic Product Specification 2SA1079 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・High transition frequency ・Excellent safe operating area APPLICATIONS ・High-frequency power amplifier ・Audio power amplifiers and drivers PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -160 V VEBO Emitter-base voltage Open collector -5 V -2 A 25 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ JMnic Product Specification 2SA1079 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,RBE=∞ -160 V V(BR)CBO Collector-base breakdown voltage IC=-1μA ,IE=0 -160 V V(BR)EBO Emitter-base breakdown voltage IE=-1μA ,IC=0 -5 V Collector-emitter saturation voltage IC=-0.7A; IB=-70mA -0.45 -1.0 V VBE Base-emitter on voltage IC=-0.7A ; VCE=-5V -0.8 -1.7 V ICBO Collector cut-off current VCB=-160V; IE=0 -1 μA ICEO Collector cut-off current VCE=-160V; IB=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -1 μA hFE-1 DC current gain IC=-0.3A ; VCE=-5V 100 hFE-2 DC current gain IC=-0.7A ; VCE=-5V 50 fT Transition frequency IC=-0.5A ; VCE=-10V;f=10MHz 120 MHz COB Output capacitance IE=0 ; VCB=-20V;f=1MHz 100 pF VCEsat CONDITIONS 2 MIN TYP. MAX UNIT 350 JMnic Product Specification 2SA1079 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3