JMNIC 2SA1079

JMnic
Product Specification
2SA1079
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220 package
・High transition frequency
・Excellent safe operating area
APPLICATIONS
・High-frequency power amplifier
・Audio power amplifiers and drivers
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-160
V
VCEO
Collector-emitter voltage
Open base
-160
V
VEBO
Emitter-base voltage
Open collector
-5
V
-2
A
25
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC=25℃
JMnic
Product Specification
2SA1079
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ,RBE=∞
-160
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1μA ,IE=0
-160
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1μA ,IC=0
-5
V
Collector-emitter saturation voltage
IC=-0.7A; IB=-70mA
-0.45
-1.0
V
VBE
Base-emitter on voltage
IC=-0.7A ; VCE=-5V
-0.8
-1.7
V
ICBO
Collector cut-off current
VCB=-160V; IE=0
-1
μA
ICEO
Collector cut-off current
VCE=-160V; IB=0
-100
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1
μA
hFE-1
DC current gain
IC=-0.3A ; VCE=-5V
100
hFE-2
DC current gain
IC=-0.7A ; VCE=-5V
50
fT
Transition frequency
IC=-0.5A ; VCE=-10V;f=10MHz
120
MHz
COB
Output capacitance
IE=0 ; VCB=-20V;f=1MHz
100
pF
VCEsat
CONDITIONS
2
MIN
TYP.
MAX
UNIT
350
JMnic
Product Specification
2SA1079
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3