JMnic Product Specification 2SA1116 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SC2607 APPLICATIONS ・For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -200 V VCEO Collector-emitter voltage Open base -200 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -15 A IB Base current -5 A PC Collector power dissipation 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ JMnic Product Specification 2SA1116 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A -3.0 V ICBO Collector cut-off current VCB=-200V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 mA hFE DC current gain IC=-5A ; VCE=-4V Transition frequency IC=-0.5A ; VCE=-12V fT CONDITIONS MIN TYP. MAX -200 UNIT V 30 20 MHz 0.3 μs 0.9 μs 0.2 μs Switching times resistive load tr Rise time ts Storage time tf Fall time IC=-5.0A IB1=-IB2=-0.5A RL=12Ω;VCC=-60V 2 JMnic Product Specification 2SA1116 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3