JMNIC 2SC4468

JMnic
Product Specification
2SC4468
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・Complement to type 2SA1695
APPLICATIONS
・Audio and general purpose
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
200
V
VCEO
Collector-emitter voltage
Open base
140
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
10
A
IB
Base current
4
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SC4468
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=0.5A
0.5
V
ICBO
Collector cut-off current
VCB=200V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=6V; IC=0
10
μA
hFE
DC current gain
IC=3A ; VCE=4V
COB
Output capacitance
IE=0 ; VCB=10V,f=1MHz
250
pF
fT
Transition frequency
IC=0.5A ; VCE=12V
20
MHz
0.24
μs
4.32
μs
0.40
μs
140
UNIT
V
50
180
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A;RL=12Ω
IB1=- IB2=0.5A
VCC=60V
hFE Classifications
O
P
Y
50-100
70-140
90-180
2
JMnic
Product Specification
2SC4468
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
JMnic
Product Specification
2SC4468
Silicon NPN Power Transistors
4