JMNIC 2SC3855

Product Specification
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2SC3855
Silicon Power Transistors
DESCRIPTION
・With TO-3PN package
・Complement to type 2SA1491
APPLICATIONS
・Audio and general purpose
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
200
V
VCEO
Collector-emitter voltage
Open base
140
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
10
A
IB
Base current
4
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
Silicon
www.jmnic.com
Power
Transistors
2SC3855
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=5A IB=0.5A
2.0
V
ICBO
Collector cut-off current
VCB=200V IE=0
100
μA
IEBO
Emitter cut-off current
VEB=6V; IC=0
100
μA
hFE
DC current gain
IC=3A ; VCE=4V
Transition frequency
IC=0.5A ; VCE=12V
fT
CONDITIONS
MIN
TYP.
MAX
140
UNIT
V
50
20
MHz
0.30
μs
2.40
μs
0.40
μs
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A;RL=12Ω
IB1=- IB2=0.5A
VCC=60V
JMnic
Product Specification
www.jmnic.com
2SC3855
Silicon Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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