Product Specification www.jmnic.com 2SC3855 Silicon Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SA1491 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 10 A IB Base current 4 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification Silicon www.jmnic.com Power Transistors 2SC3855 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO Collector-emitter breakdown voltage IC=50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=5A IB=0.5A 2.0 V ICBO Collector cut-off current VCB=200V IE=0 100 μA IEBO Emitter cut-off current VEB=6V; IC=0 100 μA hFE DC current gain IC=3A ; VCE=4V Transition frequency IC=0.5A ; VCE=12V fT CONDITIONS MIN TYP. MAX 140 UNIT V 50 20 MHz 0.30 μs 2.40 μs 0.40 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=5A;RL=12Ω IB1=- IB2=0.5A VCC=60V JMnic Product Specification www.jmnic.com 2SC3855 Silicon Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) JMnic