JMnic Product Specification 2SA744/745/745A Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SC1402/1403/1403A APPLICATIONS ・For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2SA744 VCBO VCEO Collector-base voltage Collector-emitter voltage 2SA745 Open emitter Emitter-base voltage -100 2SA745A -120 2SA744 -80 2SA745 UNIT -80 Open base 2SA745A VEBO VALUE -100 V V -120 Open collector -6 V IC Collector current -8 A IB Base current -3 A PC Collector power dissipation 70 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ JMnic Product Specification 2SA744/745/745A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA744 V(BR)CEO Collector-emitter breakdown voltage 2SA745 ICBO Collector-emitter saturation voltage Collector cut-off current IC=-50mA ;IB=0 MAX UNIT V -100 -120 IC=-3A; IB=-0.3A 2SA744 VCB=-80V; IE=0 2SA745 VCB=-100V; IE=0 2SA745A VCB=-120V; IE=0 IEBO Emitter cut-off current VEB=-6V; IC=0 hFE DC current gain IC=-3A ; VCE=-4V Transition frequency IC=-0.5A ; VCE=-12V fT TYP. -80 2SA745A VCEsat MIN -1.5 V -1.0 mA -1.0 mA 30 15 MHz 1.2 μs 2.0 μs 0.55 μs Switching times tr Rise time ts Storage time tf Fall time IC=-3A;RL=4Ω IB1=-0.2A; IB2=0.1A VCC=-12V 2 JMnic Product Specification 2SA744/745/745A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3