JMnic Product Specification 2SA968 2SA968A 2SA968B Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC2238 ・High breakdown votage APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SA968 VCBO VCEO Collector-base voltage Collector-emitter voltage 2SA968A Open emitter Emitter-base voltage -180 2SA968B -200 2SA968 -160 2SA968A UNIT -160 Open base 2SA968B VEBO VALUE -180 V V -200 Open collector -5 V IC Collector current -1.5 A IE Emitter current 1.5 A PT Total power dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA968 2SA968A 2SA968B Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA968 V(BR)CEO Collector-emitter breakdown voltage 2SA968A MAX UNIT IC=-10mA; IB=0 V -180 -200 Emitter-base breakdown voltage IE=-1mA; IC=0 Collector-emitter saturation voltage IC=-0.5A; IB=-50mA -1.5 V VBE Base-emitter on voltage IC=-500mA ; VCE=-5V -1.0 V ICBO Collector cut-off current VCB=-160V ;IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 μA hFE DC current gain IC=-100mA ; VCE=-5V Cob Output capacitance IE=0 ; VCB=-10V,f=1MHz 30 pF fT Transition frequency IC=-100mA ; VCE=10V 100 MHz VCEsat TYP. -160 2SA968B V(BR)EBO MIN hFE Classifications O Y 70-140 120-240 2 -5 V 70 240 JMnic Product Specification 2SA968 2SA968A 2SA968B Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3