JMnic Product Specification 2SB596 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD526 ・Good linearity of hFE APPLICATIONS ・Power amplifier applications ・Recommend for 20～25W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -4 A IE Emitter current -4 A IB Base current -3 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SB596 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -80 V V(BR)EBO Emitter-base breakdown votage IE=-10mA; IC=0 -5 V Collector-emitter saturation voltage IC=-3 A;IB=-0.3 A -1.7 V VBE Base-emitter on voltage IC=-3A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -30 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA hFE-1 DC current gain IC=-0.5A ; VCE=-5V 40 hFE-2 DC current gain IC=-3A ; VCE=-5V 15 fT Transition frequency IC=-0.5A ; VCE=-5V 3 COB Output capacitance IE=0; VCB=-10V;f=1MHz VCEsat CONDITIONS hFE-1 classifications R O Y 40-80 70-140 120-240 2 MIN TYP. MAX UNIT 240 MHz 130 pF JMnic Product Specification 2SB596 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification 2SB596 Silicon PNP Power Transistors 4