Product Specification www.jmnic.com 2SD525 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB595 ・High breakdown voltage :VCEO=100V ・Low collector saturation volage : VCE(sat)=2.0V(Max) APPLICATIONS ・Power amplifier applications ・Recommend for 30W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A IE Emitter current 5 A IB Base current 0.5 A PC Collectorl power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification www.jmnic.com 2SD525 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO Collector-emitter breakdown voltage IC=50mA; IB=0 100 V VEBO Emitter-base breakdown votage IE=10mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=4A;IB=0.4 A 2.0 V VBE Emitter-base voltage IC=1A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=100V IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE-1 DC current gain IC=1A ; VCE=5V 40 hFE-2 DC current gain IC=4A ; VCE=5V 20 fT Transition frequency IC=1A ; VCE=5V 12 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 100 pF hFE-1 classifications R O Y 40-80 70-140 120-240 JMnic MIN TYP. MAX UNIT 240 Product Specification www.jmnic.com 2SD525 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) JMnic