JMNIC 2SB1017

JMnic
Product Specification
2SB1017
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220Fa package
・Complement to type 2SD1408
APPLICATIONS
・For power amplifications
・Recommended for 20-25W high-fidelity
audio frequency amplifier output stage
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-80
V
VCEO
Collector-emitter voltage
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-5
V
-4
A
-0.4
A
IC
Collector current
IB
Base current
PC
Collector power dissipation
Ta=25℃
2.0
TC=25℃
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SB1017
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-3A; IB=-0.3A
-1.0
-1.7
V
VBE
Base-emitter on voltage
IC=-3A ;VCE=-5V
-1.0
-1.5
V
ICBO
Collector cut-off current
VCB=-80V; IE=0
-30
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-100
μA
hFE-1
DC current gain
IC=-0.5A ; VCE=-5V
40
hFE-2
DC current gain
IC=-3A ; VCE=-5V
15
Transition frequency
IC=-0.5A; VCE=-5V
Collector output capacitance
IE=0, f=1MHz ; VCB=-10V
fT
COB
‹
CONDITIONS
hFE-1 Classifications
R
O
Y
40-80
70-140
120-240
2
MIN
TYP.
MAX
-80
UNIT
V
240
9
MHz
130
pF
JMnic
Product Specification
2SB1017
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
JMnic
Product Specification
2SB1017
Silicon PNP Power Transistors
4