JMNIC 2SB826

JMnic
Product Specification
2SB826
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220 package
・Low collector saturation voltage
・Complement to type 2SD1062
・Wide area of safe operation
APPLICATIONS
・Relay drivers,
・High-speed inverters, converters
・General high-current switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-50
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current (DC)
-12
A
ICP
Collector current (Pulse)
-15
A
PC
Collector power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SB826
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ;RBE=∞
-50
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ;IE=0
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
-6
V
Collector-emitter saturation voltage
IC=-6A;IB=-0.3A
-0.5
V
ICBO
Collector cut-off current
VCB=-40V;IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-0.1
mA
hFE-1
DC current gain
IC=-1A ; VCE=-2V
70
hFE-2
DC current gain
IC=-5A ; VCE=-2V
30
Transition frequency
IC=-1A ; VCE=-5V
VCEsat
fT
CONDITIONS
MIN
TYP.
MAX
UNIT
280
10
MHz
0.2
μs
0.1
μs
0.4
μs
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5.0A ;IB1=- IB2=0.5A
hFE-1 classifications
Q
R
S
70-140
100-200
140-280
2
JMnic
Product Specification
2SB826
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
2SB826
Silicon PNP Power Transistors
4