JMnic Product Specification 2SB829 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD1065 ・Wide area of safe operation ・Low collector saturation voltage : VCE(sat) =–0.5V max. APPLICATIONS ・Relay drivers, ・High-speed inverters,converters ・General high-current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -15 A ICP Collector current (Pulse) -20 A PC Collector power dissipation 90 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SB829 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;RBE=∞ -50 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -6 V Collector-emitter saturation voltage IC=-8A ,IB=-0.4A ICBO Collector cut-off current IEBO VCEsat CONDITIONS MIN TYP. UNIT -0.5 V VCB=-40V, IE=0 -0.1 mA Emitter cut-off current VEB=-4V; IC=0 -0.1 mA hFE-1 DC current gain IC=-1A ; VCE=-2V 70 hFE-2 DC current gain IC=-8A ; VCE=-2V 30 Transition frequency IC=-1A ; VCE=-5V fT -0.26 MAX 280 20 MHz 0.20 μs 0.10 μs 0.50 μs Switching times ton Turn-on time tstg Storage time tf IC=-2.0A; IB1=-IB2=-0.2A VCC=20V;RL=10Ω Fall time hFE-1 Classifications Q R S 70-140 100-200 140-280 2 JMnic Product Specification 2SB829 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 JMnic Product Specification 2SB829 Silicon PNP Power Transistors 4