Product Specification www.jmnic.com 2SD1213 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Low collector-to-emitter saturation voltage : VCE(sat)= 0.4V(max.) ・Large current capacity. ・Complement to type 2SB904 APPLICATIONS ・Large current switching of relay drivers, high-speed inverters, converters. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 30 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 20 A ICP Collector current (Pulse) 30 A PC Collector power dissipation TC=25℃ 60 Ta=25℃ 2.5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification www.jmnic.com 2SD1213 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO Collector-emitter breakdown voltage IC=1mA ;RBE=∞ 30 V VCBO Collector-base breakdown voltage IC=1mA; IE=0 60 V VEBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=8A; IB=0.4A 0.4 V ICBO Collector cut-off current VCB=40V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=2V 70 hFE-2 DC current gain IC=10A ; VCE=2V 30 Transition frequency IC=1A ; VCE=5V fT CONDITIONS MIN TYP. MAX UNIT 280 120 MHz 0.3 μs 0.6 μs 0.02 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=10A IB1=-IB2=-0.5A hFE-1 Classifications Q R S 70-140 100-200 140-280 JMnic Product Specification www.jmnic.com 2SD1213 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) JMnic