JMnic Product Specification 2SB1136 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1669 ・Low collector saturation voltage ・Wide ASO APPLICATIONS ・Relay drivers ・High speed inverters,converters ・General high current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -12 A ICM Collector current-peak -15 A PC Collector dissipation Ta=25℃ 2 TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB1136 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;RBE=∞ -50 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -6 V Collector-emitter saturation voltage IC=-6A; IB=-0.6A -0.4 V ICBO Collector cut-off current VCB=-40V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -100 μA hFE-1 DC current gain IC=-1A ; VCE=-2V 70 hFE-2 DC current gain IC=-5A ; VCE=-2V 30 Transition frequency IC=-1A ; VCE=-5V VCEsat fT CONDITIONS MIN TYP. MAX UNIT 280 10 MHz 0.2 μs 0.4 μs 0.1 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=-2.0A IB1=-IB2=-0.2A hFE-1 Classifications Q R S 70-140 100-200 140-280 2 JMnic Product Specification 2SB1136 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification 2SB1136 Silicon PNP Power Transistors 4