JMnic Product Specification 2SC3746 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SA1469 ・Low saturation voltage ・Excellent current dependence of hFE ・Short switching time APPLICATIONS ・Various inductance of lamp drivers for electronic equipment ・Inverters ,converters ・Switching regulator ,driver PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A ICM Collector current-peak 7 A PC Collector dissipation Ta=25℃ 2 TC=25℃ 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SC3746 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=∞ 60 V V(BR)CBO Collector-base breakdown voltage IC=10mA ;IE=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 5 V Collector-emitter saturation voltage IC=2.5A;IB=0.125A 0.4 V ICBO Collector cut-off current VCB=40V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=2V Transition frequency IC=1A ; VCE=5V VCEsat fT CONDITIONS MIN TYP. 70 MAX UNIT 280 100 MHz 0.1 μs 0.5 μs 0.1 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=2.0A; IB1=-IB2=0.1A VCC=20V ,RL=10Ω hFE Classifications Q R S 70-140 100-200 140-280 2 JMnic Product Specification 2SC3746 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification 2SC3746 Silicon NPN Power Transistors 4