JMNIC 2SC3746

JMnic
Product Specification
2SC3746
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220F package
・Complement to type 2SA1469
・Low saturation voltage
・Excellent current dependence of hFE
・Short switching time
APPLICATIONS
・Various inductance of lamp drivers for
electronic equipment
・Inverters ,converters
・Switching regulator ,driver
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
80
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
5
A
ICM
Collector current-peak
7
A
PC
Collector dissipation
Ta=25℃
2
TC=25℃
20
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SC3746
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA ;RBE=∞
60
V
V(BR)CBO
Collector-base breakdown voltage
IC=10mA ;IE=0
80
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA ;IC=0
5
V
Collector-emitter saturation voltage
IC=2.5A;IB=0.125A
0.4
V
ICBO
Collector cut-off current
VCB=40V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
0.1
mA
hFE
DC current gain
IC=1A ; VCE=2V
Transition frequency
IC=1A ; VCE=5V
VCEsat
fT
CONDITIONS
MIN
TYP.
70
MAX
UNIT
280
100
MHz
0.1
μs
0.5
μs
0.1
μs
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2.0A; IB1=-IB2=0.1A
VCC=20V ,RL=10Ω
hFE Classifications
Q
R
S
70-140
100-200
140-280
2
JMnic
Product Specification
2SC3746
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
JMnic
Product Specification
2SC3746
Silicon NPN Power Transistors
4