JMNIC 2SA1292

JMnic
Product Specification
2SA1292
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3PN package
・Low saturation voltage.
・Fast switching time.
・Complement to type 2SC3256
APPLICATIONS
・Various inductance, lamp drivers for
electrical equipment.
・Inverters, converters
・Power amplifier
・High-speed switching
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-80
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-15
A
ICM
Collector current-peak
-20
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SA1292
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ,IE=0
-80
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ,IB=0
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ,IC=0
-5
V
Collector-emitter saturation voltage
IC=-7.5A; IB=-0.375A
-0.4
V
ICBO
Collector cut-off current
VCB=-40V; IE=0
-100
μA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-100
μA
hFE
DC current gain
IC=-1A ; VCE=-2V
Transition frequency
IC=-1A ; VCE=-5V
VCEsat
fT
70
280
100
MHz
0.1
μs
0.5
μs
0.1
μs
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-6A IB1=- IB2=-0.3A
VCC=-20V;RL=3.3Ω
hFE Classifications
Q
R
S
70-140
100-200
140-280
2
JMnic
Product Specification
2SA1292
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3