JMnic Product Specification 2SB944 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Large collector current IC ・Low collector saturation voltage ・Complement to type 2SD1269 APPLICATIONS ・For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -130 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -4 A ICM Collector current-peak -8 A PC Ta=25℃ 2 TC=25℃ 35 Collector power dissipation W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB944 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,IB=0 VCEsat Collector-emitter saturation voltage IC=-3A, IB=-0.15A -0.5 V VBEsat Base-emitter saturation voltage IC=-3A, IB=-0.15A -1.5 V IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA ICBO Collector cut-off current VCB=-100V; IE=0 -10 μA hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE-2 DC current gain IC=-1A ; VCE=-2V 90 Transition frequency IC=-0.5A; VCE=-10V;f=10MHz fT CONDITIONS MIN TYP. MAX -80 UNIT V 260 30 MHz 0.15 μs 0.8 μs 0.15 μs Switching times ton Turn-on time tstg Storage time tf IC=-1A;IB1=-IB2=-0.1A Fall time hFE-2 Classifications Q P 90-180 130-260 2 JMnic Product Specification 2SB944 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3