Product Specification www.jmnic.com 2SD1049 Silicon NPN Power Transistors · DESCRIPTION ・With TO-3PN package ・High current, ・High speed switching ・High reliability APPLICATIONS ・Switching regulators ・Motor controls ・High frequency inverters ・General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 25 A IB Base current 5 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -40~150 ℃ TC=25℃ JMnic Product Specification www.jmnic.com 2SD1049 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞ 80 V VCBO Collector-base breakdown voltage IC=0.1mA ;IE=0 120 V VEBO Emitter-base breakdown voltage IE=0.1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=25A IB=2.5A 1.5 V VBEsat Base-emitter saturation voltage IC=25A IB=2.5A 2.0 V ICBO Collector cut-off current VCB=120V IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=25A ; VCE=5V Thermal resistance Junction to case 1.55 ℃/W 1.0 μs 2.5 μs 0.4 μs Rth(j-c) CONDITIONS MIN TYP. MAX UNIT 20 Switching times ton tstg tf Turn-on time Storage time IC=25A IB1=-IB2=2.5A RL=3Ω;PW =20μs; Duty≤2% Fall time JMnic Product Specification www.jmnic.com 2SD1049 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions JMnic