JMnic Product Specification 2SC3505 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ,high reliability ・High speed switching APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 6 A IB Base current 3 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 1.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance from junction to case JMnic Product Specification 2SC3505 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 700 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 900 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.4A 0.5 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.4A 1.2 V ICBO Collector cut-off current VCB=900V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=10V; IC=0 1.0 mA hFE DC current gain IC=2A ; VCE=5V 1.0 μs 5.0 μs 1.0 μs 10 Switching times ton Turn-on time tstg Storage time tf IC=3A;IB1=0.6A;IB2=-1.2A RL=100Ω,PW=20μs Duty≤2% Fall time 2 JMnic Product Specification 2SC3505 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3