JMNIC 2SC4303

JMnic
Product Specification
2SC4303
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PML package
・High voltage switchihg transistor
APPLICATIONS
・Switching Regulator,
・Lighting Inverter and general purpose
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1400
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7
V
6
A
80
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SC4303
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA; IB=0
800
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=2.5A;IB=0.5A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=2.5A;IB=0.5A
1.5
V
ICBO
Collector cut-off current
VCB=1200V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=7V; IC=0
100
μA
hFE
DC current gain
IC=2.5A ; VCE=4V
Transition frequency
IE=0.5A ; VCE=12V
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
6
4
MHz
JMnic
Product Specification
2SC4303
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3