JMnic Product Specification 2SA1107 Silicon PNP Power Transistors DESCRIPTION ・With MT-200 package ・High power dissipations APPLICATIONS ・Audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V -10 A 120 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA1107 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ; IB=0 -150 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ; IC=0 -5 V Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V VBE Base-emitter on voltage IC=-5A ; VCE=-5V -2.0 V ICBO Collector cut-off current VCB=-140V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 55 hFE-2 DC current gain IC=-5A ; VCE=-5V 35 Transition frequency IC=-0.5A ; VCE=-10V VCEsat fT CONDITIONS 2 MIN TYP. MAX UNIT 160 50 MHz JMnic Product Specification 2SA1107 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3