JMnic Product Specification 2SA1169 Silicon PNP Power Transistors DESCRIPTION ・With MT-200 package ・High power dissipation APPLICATIONS ・Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -200 V VCEO Collector-emitter voltage Open base -200 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -15 A IB Base current -5 A PC Collector power dissipation 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA1169 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ; IB=0 -200 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ; IE=0 -200 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ; IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V VBEsat Base-emitter saturation voltage IC=-5A ;IB=-0.5A -2.5 V ICBO Collector cut-off current VCB=-200V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -10 μA hFE DC current gain IC=-5A ; VCE=-4V Transition frequency IC=-1A ; VCE=-10V fT CONDITIONS 2 MIN TYP. MAX UNIT 50 20 MHz JMnic Product Specification 2SA1169 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3