JMNIC 2SA1643

JMnic
Product Specification
2SA1643
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220F package
・Complement to type 2SC4327
・Low collector saturation voltage
APPLICATIONS
・For power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-50
V
VCEO
Collector-emitter voltage
Open base
-35
V
VEBO
Emitter-base voltage
Open collector
-7
V
-7
A
25
W
IC
Collector current
PC
Collector dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SA1643
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ; IB=0
-80
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ; IC=0
-7
V
Collector-emitter saturation voltage
IC=-5A ;IB=-0.3A
-0.5
V
ICBO
Collector cut-off current
VCB=-50V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-10
μA
hFE
DC current gain
IC=-5A ; VCE=-2V
Transition frequency
IE=1A ; VCE=-12V
VCEsat
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
50
75
MHz
JMnic
Product Specification
2SA1643
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3