JMNIC 2SC4689

Product Specification
www.jmnic.com
2SC4689
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PFM package
・Complementary to 2SA1804
・Recommend for 55W high fidelity
audio frequency amplifier
APPLICATIONS
・Power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PFM) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
120
V
VCEO
Collector-emitter voltage
Open base
120
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
8
A
ICP
Collector current-peak
16
A
IB
Base current
0.8
A
PC
Collector power dissipation
70
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
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Product Specification
www.jmnic.com
2SC4689
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
ICBO
Collector cut-off current
VCB=120V; IE=0
5
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
5
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
55
hFE-2
DC current gain
IC=4A ; VCE=5V
35
Collector-emitter saturation voltage
IC=6A ; IB=0.6A
0.35
2
V
VBE
Base-emitter voltage
IC=4A ; VCE=5V
0.95
1.5
V
fT
Transition frequency
IC=1A ; VCE=5V
30
MHz
Collector output capacitance
IE=0;VCB=10V;f=1MHz
190
pF
VCE(sat)
Cob
CONDITIONS
hFE-1 classifications
R
O
55-110
80-160
JMnic
MIN
TYP.
MAX
120
UNIT
V
160
75
Product Specification
www.jmnic.com
2SC4689
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
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