MICROSEMI 2N6901

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
N-CHANNEL LOGIC LEVEL MOSFET
Qualified per MIL-PRF-19500/570
DEVICES
LEVELS
2N6901
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Drain – Source Voltage
VDS
100
Vdc
Gate – Source Voltage
Continuous Drain Current
VGS
± 10
Vdc
ID1
1.69
Adc
ID2
1.07
Adc
Ptl
8.33 (1)
W
TC = +25°C
Continuous Drain Current
TC = +100°C
Max. Power Dissipation
Drain to Source On State Resistance
Operating & Storage Temperature
Rds(on)
Top, Tstg
1.4
(2)
Ω
-55 to +150
°C
Note: (1) Derated Linearly by 0.067 W/°C for TC > +25°C
(2) VGS = 5Vdc, ID = 1.07A
2N6901
TO-205AF
(formerly TO-39)
SEE FIGURE 1
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
V(BR)DSS
100
VGS(th)1
VGS(th)2
VGS(th)3
1.0
0.5
Max.
Unit
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
VGS = 0V, ID = -1mAdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 1.0mA
VDS ≥ VGS, ID = 1.0mA, Tj = +125°C
VDS ≥ VGS, ID = 1.0mA, Tj = -55°C
Gate Current
VGS = ±10V, VDS = 0V
VGS = ±10V, VDS = 0V, Tj = +125°C
Vdc
2.0
Vdc
3.0
IGSS1
IGSS2
±100
±200
nAdc
Drain Current
VGS = 0V, VDS = 80V
VGS = 0V, VDS = 80V, Tj = +125°C
Static Drain-Source On-State Resistance
VGS = 5V, ID = 1.07A pulsed
IDSS1
IDSS2
1.0
50.0
µAdc
uAdc
rDS(on)1
1.4
Ω
Tj = -125°C
VGS = 5V, ID = 1.07A pulsed
rDS(on)2
2.6
Ω
1.6
Vdc
Diode Forward Voltage
VGS = 0V, ID = 1.69A pulsed
T4-LDS-0188 Rev. 1 (101985)
VSD
0.8
Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
VGS = 5V, ID = 1.69A
VDS = 50V
Min.
Qg(on)
Qgs
Qgd
Max.
5.0
1.0
2.9
Unit
nC
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
Diode Reverse Recovery Time
T4-LDS-0188 Rev. 1 (101985)
Symbol
ID = 1.69A, VGS = 5Vdc,
Gate drive impedance =
25Ω,
VDD = 50Vdc
di/dt ≤ 100A/µs, VDD ≤
30V,
IF = 1.0A
Min.
Max.
td(on)
tr
td(off)
tf
25
80
45
80
trr
250
Unit
ns
ns
Page 2 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Symbol
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
TL
TW
r
α
NOTE:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.305
.335
7.75
8.51
.160
.180
4.07
4.57
.335
.370
8.51
9.40
.200 TP
5.08 TP
.016
.021
0.41
0.53
.500
.750 12.70 19.05
.016
.019
0.41
0.48
.050
1.27
.250
6.35
.100
2.54
.050
1.27
.029
.045
0.74
1.14
.028
.034
0.71
0.86
.010
0.25
45° TP
45° TP
8,9
8,9
8,9
8,9
8,9
6
5
4
3
10
6
Dimensions are in inches.
Millimeters are given for general information only.
Beyond radius(r) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
Dimension TL measured from maximum HD.
Outline in this zone is not controlled.
Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 (0.18 mm) radius
of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
LU applies between L1 and L2. LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond
LL minimum.
All three leads.
Radius(r) applies to both inside corners of tab.
Drain is electrically connected to the case.
Pin out: 1- source, 2 - gate, 3 - drain (case).
In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1. Physical dimensions for TO-205 AF
T4-LDS-0188 Rev. 1 (101985)
Page 3 of 3