MICROSEMI 2N6796

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557
DEVICES
LEVELS
2N6796
2N6796U
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Drain – Source Voltage
VDS
100
Vdc
Gate – Source Voltage
Continuous Drain Current
VGS
± 20
Vdc
ID1
8.0
Adc
ID2
5.0
Adc
Ptl
25 (1)
W
(2)
Ω
TC = +25°C
Continuous Drain Current
TC = +100°C
Max. Power Dissipation
Drain to Source On State Resistance
Operating & Storage Temperature
Rds(on)
Top, Tstg
1.8
-55 to +150
°C
Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C
(2) VGS = 10Vdc, ID = 5.0A
TO-205AF
(formerly TO-39)
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25mA
VDS ≥ VGS, ID = 0.25mA, Tj = +125°C
VDS ≥ VGS, ID = 0.25mA, Tj = -55°C
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
Drain Current
VGS = 0V, VDS = 80V
VGS = 0V, VDS = 80V, Tj = +125°C
Static Drain-Source On-State Resistance
VGS = 10V, ID = 5.0A pulsed
VGS = 10V, ID = 8.0A pulsed
Tj = +125°C
VGS = 10V, ID = 5.0A pulsed
Diode Forward Voltage
VGS = 0V, ID = 8.0A pulsed
T4-LDS-0047 Rev. 2 (101281)
Symbol
Min.
V(BR)DSS
100
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
Max.
Unit
Vdc
4.0
Vdc
5.0
IGSS1
IGSS2
±100
±200
nAdc
IDSS1
IDSS2
25
0.25
µAdc
mAdc
rDS(on)1
rDS(on)2
0.18
0.195
Ω
Ω
rDS(on)3
0.35
Ω
VSD
1.5
Vdc
U – 18 LCC
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
VGS = 10V, ID = 8.0A
VDS = 50V
Min.
Qg(on)
Qgs
Qgd
Max.
Unit
28.51
6.34
16.59
nC
Max.
Unit
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
ID = 8.0A, VGS = 10Vdc,
Gate drive impedance = 7.5Ω,
VDD = 30Vdc
Diode Reverse Recovery Time
di/dt ≤ 100A/µs, VDD ≤ 50V,
IF = 8.0A
T4-LDS-0047 Rev. 2 (101281)
Min.
td(on)
tr
td(off)
tf
30
75
40
45
trr
300
ns
ns
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Ltr
CD
CH
HD
h
J
k
LD
LL
LS
LU
L1
L2
P
Q
r
α
Dimensions
Inches
Millimeters
Min
Max Min
Max
.305 .355 7.75
9.02
.160 .180 4.07
4.57
.335 .370 8.51
9.39
.009
.041 0.23
1.04
.028
.034 0.72
0.86
.029
.045 0.74
1.14
.016 .021 0.41
0.53
.500
.750 12.7 19.05
.200 TP
5.08 TP
.016 .019 0.41
0.48
.050
1.27
.250
6.35
.070
1.78
.050
1.27
.010
0.25
45° TP
45° TP
Notes
2
3
7, 8
7, 8
6
7, 8
7, 8
7, 8
5
4
9
6
NOTES:
1
2
3
4
5
Dimensions are in inches. Millimeters are given for general information only.
Beyond radius (r) maximum, j shall be held for a minimum length of .011 (0.028 mm).
Dimension k measured from maximum HD.
Outline in this zone is not controlled.
Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007
(0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
6 LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL
minimum.
7 All three leads.
8 Radius (r) applies to both inside corners of tab.
9 Drain is electrically connected to the case.
10 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1. Physical dimensions for TO-205AF.
T4-LDS-0047 Rev. 2 (101281)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
NOTES:
1
2
3
4
Dimensions are in inches.
Millimeters are given for general information only.
In accordance with ASME Y14.5M, diameters are equivalent to
φx symbology.
Ceramic package only.
Ltr
BL
BW
CH
LL1
LL2
LS
LS1
LS2
LW
Q1
Q2
Q3
TL
TW
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.345
.360
8.77
.280
.295
7.11
.095
.115
2.41
.040
.055
1.02
.055
.065
1.40
.050 BSC
1.27 BSC
.025 BSC
0.635 BSC
.008 BSC
0.203 BSC
.020
.030
0.51
0.76
.105 REF
2.67 REF
.120 REF
3.05 REF
.045
.055
1.14
1.40
.070
.080
1.78
2.03
.120
.130
3.05
3.30
FIGURE 2. Physical dimensions for LCC.
T4-LDS-0047 Rev. 2 (101281)
Page 4 of 4