JMnic Product Specification 2SC643 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3 package ・High voltage,high reliability ・Low collector saturation voltage APPLICATIONS ・For color TV horizontal output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1100 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V 2.5 A 50 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic 2SC643 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A 5.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=500V;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE DC current gain IC=2A ; VCE=15V Transition frequency IC=0.1A ; VCE=10V fT CONDITIONS 2 MIN TYP. MAX UNIT 600 V 5 V 7 2 MHz JMnic Product Specification 2SC643 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3