JMNIC 2SC867

JMnic
Product Specification
2SC867
Silicon NPN Power Transistors
DESCRIPTION
・With TO-66 package
・High collector-base breakdown voltage
:VCBO=400V(min)
APPLICATIONS
・For high voltage and switching applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
400
V
VCEO
Collector-emitter voltage
Open base
150
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
1
A
ICM
Collector current-peak
2
A
PD
Total power dissipation
23
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SC867
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=30mA; IB=0
150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=1A; IB=0.2 A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=1A; IB=0.2 A
1.5
V
ICBO
Collector cut-off current
VCB=400V;IE=0
100
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
μA
hFE
DC current gain
IC=0.1A ; VCE=3V
Transition frequency
IC=0.2A ; VCE=10V
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
50
8
MHz
JMnic
Product Specification
2SC867
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3