JMNIC 2SD2296

Product Specification
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2SD2296
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・High breakdown voltage
APPLICATIONS
・For color TV horizontal deflection
output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current (DC)
5
A
ICP
Collector current (Pulse)
6
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
www.jmnic.com
2SD2296
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO
Collector-emitter breakdown voltage
IC=10mA ;RBE=∞
VEBO
Emitter-base breakdown voltage
IE=10mA ;IC=0
VCEsat
Collector-emitter saturation voltage
IC=4.5A; IB=1.2A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=4.5A; IB=1.2A
1.5
V
ICES
Collector cut-off current
VCE=1500V ;RBE=0
0.5
mA
hFE
DC current gain
IC=1A ; VCE=5V
800
V
6
V
8
30
Switching times
tf
Fall time
IC=4.0A
IB1=0.8A;IB2≈-1.5A
JMnic
0.8
μs
Product Specification
www.jmnic.com
2SD2296
Silicon Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
JMnic