Product Specification www.jmnic.com 2SD2296 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage APPLICATIONS ・For color TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 5 A ICP Collector current (Pulse) 6 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification www.jmnic.com 2SD2296 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞ VEBO Emitter-base breakdown voltage IE=10mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=4.5A; IB=1.2A 5.0 V VBEsat Base-emitter saturation voltage IC=4.5A; IB=1.2A 1.5 V ICES Collector cut-off current VCE=1500V ;RBE=0 0.5 mA hFE DC current gain IC=1A ; VCE=5V 800 V 6 V 8 30 Switching times tf Fall time IC=4.0A IB1=0.8A;IB2≈-1.5A JMnic 0.8 μs Product Specification www.jmnic.com 2SD2296 Silicon Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) JMnic