JMnic Product Specification 2SC4350 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High DC current gain ・DARLINGTON APPLICATIONS ・For high speed power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A IB Base current 0.5 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC4350 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 100 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0; 100 V V(BR)EBO Emitter-base breakdown voltage IE=5mA; IC=0; 7 V VCEsat Collector-emitter saturation voltage IC=5A; IB=5mA 1.5 V VBEsat Base-emitter saturation voltage IC=5A; IB=5mA 2.0 V ICBO Collector cut-off current VCB=100V ;IE=0 1 μA IEBO Emitter cut-off current VEB=7V; IC=0 5.0 mA hFE DC current gain IC=5A ; VCE=2V CONDITIONS hFE classifications M L K 2000-5000 4000-10000 8000-20000 2 MIN 2000 TYP. MAX 20000 UNIT JMnic Product Specification 2SC4350 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3