JMNIC 2SC3678

Product Specification
www.jmnic.com
2SC3678
Silicon NPN Power Transistors
ESCRIPTION
・High Voltage Switching
・With TO-3PN package
APPLICATIONS
・ Switching Regulator
・ General Purpose
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
900
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
3
A
ICP
Collector current-pulse
6
A
IB
Base current
1.5
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
www.jmnic.com
2SC3678
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter breakdown voltage
IC=10mA
VCEsat
Collector-emitter saturation voltage
IC=1A IB=0.2A
0.5
V
VBEsat
Base-emitter saturation voltage
IC=1A IB=0.2A
1.2
V
ICBO
Collector cut-off current
VCB=800V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=7V; IC=0
100
μA
hFE
DC current gain
IC=1A ; VCE=4V
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
50
pF
fT
Transition frequency
IE=0.3A ; VCE=12V
6
MHz
JMnic
MIN
TYP.
MAX
800
UNIT
V
10
30
Product Specification
www.jmnic.com
2SC3678
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
JMnic