Product Specification www.jmnic.com 2SC3678 Silicon NPN Power Transistors ESCRIPTION ・High Voltage Switching ・With TO-3PN package APPLICATIONS ・ Switching Regulator ・ General Purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A ICP Collector current-pulse 6 A IB Base current 1.5 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification www.jmnic.com 2SC3678 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO Collector-emitter breakdown voltage IC=10mA VCEsat Collector-emitter saturation voltage IC=1A IB=0.2A 0.5 V VBEsat Base-emitter saturation voltage IC=1A IB=0.2A 1.2 V ICBO Collector cut-off current VCB=800V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE DC current gain IC=1A ; VCE=4V Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 50 pF fT Transition frequency IE=0.3A ; VCE=12V 6 MHz JMnic MIN TYP. MAX 800 UNIT V 10 30 Product Specification www.jmnic.com 2SC3678 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) JMnic