JMnic Product Specification 2SB553 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD553 ・Low collector saturation voltage APPLICATIONS ・High current switching applications ・Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -70 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -7 A PC Ta=25℃ 1.5 TC=25℃ 40 Collector dissipation W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ JMnic Product Specification 2SB553 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A -0.2 -0.4 V VBEsat Base-emitter saturation voltage IC=-4A; IB=-0.4A -0.9 -1.2 V ICBO Collector cut-off current VCB=-70V; IE=0 -30 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE-1 DC current gain IC=-1A ; VCE=-1V 70 hFE-2 DC current gain IC=-4A ; VCE=-1V 30 COB Collector output capacitance IE=0 ; VCB=-10V; f=1MHz 250 pF Transition frequency IC=-1A ; VCE=-4V 10 MHz 0.2 μs 2.5 μs 0.5 μs fT CONDITIONS MIN TYP. MAX -50 UNIT V 240 Switching times ton Turn-on time ts Storage time tf Fall time IB1=-IB2=-0.3A; VCC≈-30V RL=10Ω hFE-1Classifications O Y 70-140 120-240 2 JMnic Product Specification 2SB553 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 JMnic Product Specification 2SB553 Silicon PNP Power Transistors 4