Product Specification www.jmnic.com BUL381D Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage capability ・Very high switching speed ・Integrated antiparallel collector-emitter diode APPLICATIONS ・Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter LIMITING VALUES SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 5 A ICM Collector current-Peak (tp<5 ms) 8 A IB Base current 2 A IBM Base current-Peak (tp<5 ms) 4 A PT Total power dissipation 70 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 1.78 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case JMnic Product Specification www.jmnic.com BUL381D Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL CONDITIONS MIN Collector-emitter sustaining voltage IC=100mA; L=25mH 400 Emitter-base voltage IE=10mA; IC=0 VCEsat-1 Collector-emitter saturation voltage IC=1A ;IB=0.2A 0.5 V VCEsat-2 Collector-emitter saturation voltage IC=2A ;IB=0.4A 0.7 V VCEsat-3 Collector-emitter saturation voltage IC=3A ;IB=0.8A 1.1 V VBEsat-1 Emitter-base saturation voltage IC=1A ;IB=0.2A 1.1 V VBEsat-2 Emitter-base saturation voltage IC=2A ;IB=0.4A 1.2 V ICES Collector cut-off current VCE=800V; VBE=0 Tj=125℃ 100 500 μA ICEO Collector cut-off current VCE=400V; IB=0 250 μA hFE-1 DC current gain IC=2A ; VCE=5V 8 hFE-2 DC current gain IC=10mA ; VCE=5V 10 Diode forward voltage IC=2A 2.5 V 2.5 μs 0.8 μs VCEO(SUS) VEBO Vf PARAMETER TYP. MAX UNIT V Switching times resistive load ts Storage time tf Fall time VCC=250V ,IC=2A IB1=- IB2=0.4A tp=30μs JMnic 1.5 Product Specification www.jmnic.com BUL381D Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) JMnic