Inchange Semiconductor Product Specification BUL742 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·High voltage capability ·Very high switching speed APPLICATIONS ·Electronic ballast for fluorescent lighting ·Switch mode power supplies PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 12 V IC Collector current 4 A ICM Collector current-Peak (tp<5 ms) 8 A IB Base current 2 A IBM Base current-Peak (tp<5 ms) 4 A PT Total power dissipation 70 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 1.78 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification BUL742 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; L=25mH 400 V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 12 VCEsat-1 Collector-emitter saturation voltage IC=1A ;IB=0.2A 0.5 V VCEsat-2 Collector-emitter saturation voltage IC=2A ;IB=0.4A 1.0 V VCEsat-3 Collector-emitter saturation voltage IC=4A ;IB=0.8A 1.5 V Base-emitter saturation voltage IC=2A ;IB=0.4A 1.5 V ICES Collector cut-off current VCE=900V; VBE=0 100 μA hFE-1 DC current gain IC=250mA ; VCE=5V 35 70 hFE-2 DC current gain IC=2A ; VCE=5V 10 35 VBEsat CONDITIONS MIN TYP. MAX UNIT V Switching times resistive load ts Storage time tf Fall time VCC=125V ,IC=0.5A IB1=-IB2=45mA tp=300μs 2 11 μs 0.25 μs Inchange Semiconductor Product Specification BUL742 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3