ISC BUL742

Inchange Semiconductor
Product Specification
BUL742
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-220C package
·High voltage capability
·Very high switching speed
APPLICATIONS
·Electronic ballast for fluorescent
lighting
·Switch mode power supplies
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
900
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
12
V
IC
Collector current
4
A
ICM
Collector current-Peak (tp<5 ms)
8
A
IB
Base current
2
A
IBM
Base current-Peak (tp<5 ms)
4
A
PT
Total power dissipation
70
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
VALUE
UNIT
1.78
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
BUL742
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; L=25mH
400
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
12
VCEsat-1
Collector-emitter saturation voltage
IC=1A ;IB=0.2A
0.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=2A ;IB=0.4A
1.0
V
VCEsat-3
Collector-emitter saturation voltage
IC=4A ;IB=0.8A
1.5
V
Base-emitter saturation voltage
IC=2A ;IB=0.4A
1.5
V
ICES
Collector cut-off current
VCE=900V; VBE=0
100
μA
hFE-1
DC current gain
IC=250mA ; VCE=5V
35
70
hFE-2
DC current gain
IC=2A ; VCE=5V
10
35
VBEsat
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Switching times resistive load
ts
Storage time
tf
Fall time
VCC=125V ,IC=0.5A
IB1=-IB2=45mA
tp=300μs
2
11
μs
0.25
μs
Inchange Semiconductor
Product Specification
BUL742
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: 0.1mm)
3