SavantIC Semiconductor Product Specification BUL510 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage,high speed APPLICATIONS ·Electronic ballasts for fluorescent lighting ·Switch mode power supplies ·Electronic transformer for halogen lamp PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 9 V IC Collector current (DC) 10 A ICM Collector current-Peak 18 A IB Base current (DC) 3.5 A IBM Base current-Peak tp<5ms 7 A Ptot Total power dissipation TC=25 100 W Tj Tstg tp<5ms Maximum operating junction temperature Storage temperature 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction to case VALUE 1.25 UNIT /W SavantIC Semiconductor Product Specification BUL510 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0; L=25mH V(BR)EBO Emitter-base breakdwon voltage IE=10mA ;IC=0 VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.6A 0.8 V VCEsat-2 Collector-emitter saturation voltage IC=4A ;IB=0.8A 1.0 V VCEsat-3 Collector-emitter saturation voltage IC=5A ;IB=1.25A 1.5 V VBEsat-1 Base-emitter saturation voltage IC=3A ;IB=0.6A 1.2 V VBEsat-2 Base-emitter saturation voltage IC=5A; IB=1.25A 1.5 V ICES Collector cut-off current VCE=1000V; VBE=0 TC=125 100 500 µA ICEO Collector cut-off current VCE=450V; IB=0 250 µA hFE-1 DC current gain IC=1A ; VCE=5V 15 hFE-2 DC current gain IC=10mA ; VCE=5V 10 450 V 9 V 45 Switching times inductive load ts Storage time tf Fall time IC=4A ;VCL=300V IB1 =0.8A;IB2=-1.6A L=200µH 2 3.4 µs 0.15 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3 BUL510