SAVANTIC BUL310FP

SavantIC Semiconductor
Product Specification
BUL310FP
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220F package
·High voltage,high speed
·Wide area of safe operation
APPLICATIONS
·Electronic ballasts for fluorescent lighting
·Switch mode power supplies
·Flyback and forward single transistor
low power converters
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1000
V
VCEO
Collector-emitter voltage
Open base
500
V
VEBO
Emitter-base voltage
Open collector
9
V
IC
Collector current (DC)
5
A
ICM
Collector current-Peak
10
A
IB
Base current (DC)
3
A
IBM
Base current-Peak
tp<5ms
4
A
Ptot
Total power dissipation
TC=25
36
W
Tj
Tstg
tp<5ms
Maximum operating junction temperature
Storage temperature
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
Rth j-case
PARAMETER
Thermal resistance junction to case
VALUE
3.5
UNIT
/W
SavantIC Semiconductor
Product Specification
BUL310FP
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ; IB=0; L=25mH
V(BR)EBO
Emitter-base breakdwon voltage
IE=10mA ;IC=0
VCEsat-1
Collector-emitter saturation voltage
IC=1A; IB=0.2A
0.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=2A ;IB=0.4A
0.7
V
VCEsat-3
Collector-emitter saturation voltage
IC=3A ;IB=0.6A
1.1
V
VBEsat-1
Base-emitter saturation voltage
IC=1A; IB=0.2A
1.0
V
VBEsat-2
Base-emitter saturation voltage
IC=2A ;IB=0.4A
1.1
V
VBEsat-3
Base-emitter saturation voltage
IC=3A ;IB=0.6A
1.2
V
ICES
Collector cut-off current
VCE=1000V; VBE=0
TC=125
100
500
µA
ICEO
Collector cut-off current
VCE=400V; IB=0
250
µA
hFE-1
DC current gain
IC=10mA ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=2.5V
1.9
µs
0.16
µs
500
V
9
V
10
10
Switching times inductive load
ts
Storage time
tf
Fall time
IC=2A ;VCL=250V
IB1 =0.4A;VBE(off)=-5V
L=200µH; RBB=0B
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
BUL310FP