SavantIC Semiconductor Product Specification BUL310FP Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High voltage,high speed ·Wide area of safe operation APPLICATIONS ·Electronic ballasts for fluorescent lighting ·Switch mode power supplies ·Flyback and forward single transistor low power converters PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 9 V IC Collector current (DC) 5 A ICM Collector current-Peak 10 A IB Base current (DC) 3 A IBM Base current-Peak tp<5ms 4 A Ptot Total power dissipation TC=25 36 W Tj Tstg tp<5ms Maximum operating junction temperature Storage temperature 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction to case VALUE 3.5 UNIT /W SavantIC Semiconductor Product Specification BUL310FP Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0; L=25mH V(BR)EBO Emitter-base breakdwon voltage IE=10mA ;IC=0 VCEsat-1 Collector-emitter saturation voltage IC=1A; IB=0.2A 0.5 V VCEsat-2 Collector-emitter saturation voltage IC=2A ;IB=0.4A 0.7 V VCEsat-3 Collector-emitter saturation voltage IC=3A ;IB=0.6A 1.1 V VBEsat-1 Base-emitter saturation voltage IC=1A; IB=0.2A 1.0 V VBEsat-2 Base-emitter saturation voltage IC=2A ;IB=0.4A 1.1 V VBEsat-3 Base-emitter saturation voltage IC=3A ;IB=0.6A 1.2 V ICES Collector cut-off current VCE=1000V; VBE=0 TC=125 100 500 µA ICEO Collector cut-off current VCE=400V; IB=0 250 µA hFE-1 DC current gain IC=10mA ; VCE=5V hFE-2 DC current gain IC=3A ; VCE=2.5V 1.9 µs 0.16 µs 500 V 9 V 10 10 Switching times inductive load ts Storage time tf Fall time IC=2A ;VCL=250V IB1 =0.4A;VBE(off)=-5V L=200µH; RBB=0B 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 BUL310FP